Samsung developed the high-speed NAND flash technology in the form of 'Toggle DDR 2.0'. It is 10 times faster than commodity products, and it is able to implement data processing in the speed of 400mbps. They will be produced starting next year.
Samsung has been working on technology standardizations to expand the market for high-speed NAND flash. Starting last June, they have applied for the JEDEC standard to serve the Toggle DDR (Double Data Rate) 2.0', which is an interface specification of the next-generation high-speed NAND flash standard.
The company intends to mount this high-speed NAND flash into 4G smart phones, tablet PC's and SSD's in order to improve customer convenience as well as pioneer the growth of the NAND flash market.
Last year, Samsung Electronic began the mass production of the 30 Nano-32 GB NAND flash memory in the form of 'Toggle DDR 1.0' for the first time in the world. Now they are planning to start the mass production of Toggle DDR 2.0'.
An official from Samsung said, “Samsung has driven the high-performance NAND flash market. Last November, we produced the 30 Nano high-speed NAND flash and we will continue to lead the market growth while the demand for NAND flash memory increases."
