Confirm advanced semiconductor solution performance in end-user applications
The Samsung Electronics' exhibition booth at i-SEDEX 2007 displays example semiconductor products used in daily life in a way in which the general public can experience. The booth theme is "Samsung Semiconductor Comes into Your life!" The company's exhibition products are broken down into seven parts such as DRAM, Flash, Mobile Memory, Fusion Memory, System LSI, Hard Disk Drive, and Optical Media Storage. Separate highlight zones introduce the core product as well as technology such as 32Gb NAND, 2Gb DDR SDRAM, Flex OneNAND, and Mobile TV chipset.
Samsung Electronics semiconductor officials responsible for i-SEDEX exhibition plan said: "Our integration solution competitiveness is introduced in solution as well as experience zone." Its component solution which is adapted to the core IT product showcases cellular phones, MP3Ps, portable individual navigation systems, digital still cameras, and notebooks. Together, the general visitors can confirm Samsung Electronics semiconductor's advanced solution performance in end application of the Experience Zone, they said.
DRAM with 80nm Process Technology
Samsung Electronics became the first to apply the 90nm design rule to DRAM mass production in 2004 and was again first with 80nm processing in 2006, thereby continuing its industry leadership in DRAM-related nanotechnology. Use of the 80nm design rule results in 50% higher productivity over 90nm processing, while keeping additional facilities investment to a minimum. This production efficiency is expected to give Samsung leadership position in the production of nextgeneration DRAM (DDR3) as well.
d1Gb DDR2 SDRAM with 50nm circuits
In 2006, Samsung developed the industry's first 50nm DDR2 DRAM, which is expected to increase production efficiency from the 60nm level by 55 percent. The new 1Gb DRAM incorporates such advanced technologies as three-dimensional transistor design and multi-layered dielectric technology which greatly enhances performance and data storage capabilities. This 50nm chip encompasses three generations of DRAM technology (70nm, 60nm and 50nm) in achieving the most advanced level yet for DRAM mass production.
Flex-OneNand, a Fusion Memory Solution
In 2007, Samsung introduced the Flex-OneNAND, a new fusion semiconductor that enables both types of NAND flash memory -- single level cell (SLC) and multi-level cell (MLC) NAND -- to be used in the same device. Samsung introduced its first fusion memory product in 2004, the widely popular OneNAND, a unique fusion of NOR and NAND flash memory, followed in 2006 by the OneDRAM, a new-concept mobile DRAM/SRAM that increases the data processing speed between processors and reduces power consumption.
32Mb NAND Flash Memory with 40nm Processing
During the latter half of 2006, Samsung announced development of the industry's first 40nm memory device . a 32Gb NAND flash memory. This device was the first to incorporate Charge Trap Flash (CTF) architecture. Nonvolatile memory devices were first developed in 1971 with the introduction of the floating gate, a structure that has been used ever since. Samsung's revolutionary CTF architecture overcomes the shortcomings of the floating gate, allowing the company to break the 50nm processing barrier. It will eventually lead to design rules of 30nm and smaller. The CTF research breakthrough already has netted the company 155 patents covering original and improved CTF-related technologies.
In 2006, Samsung announced development of the first working prototype of a Phase-change Random Memory (PRAM), a 512Mb device expected to replace high-density NOR flash within the next decade. The key advantage to PRAM is its extremely fast performance. Because PRAM can rewrite data without having to first erase data previously accumulated, it is effectively 30-times faster than conventional flash memory. Exceptionally durable, PRAM is also expected to have at least 10-times the life span of flash memory.
Intelligent Display Driver IC (DDI)
Samsung's first-ever intelligent DDI monitors ambient light intensity and automatically adjusts the on-screen brightness of displays on mobile devices for optimal legibility. Power consumption is reduced by at least 30% when the display is used indoors.
1GB S-SIM Card
This next-generation card solution incorporates NAND flash memory in a smart card chip package. The SIM card function has been upgraded and the ability to store multimedia data has been added.
64 Gigabyte Solid State Drive (SSD)
This new-concept data storage device uses flash memory in place of the conventional hard disk, expanding the application of NAND flash memory far beyond small-size mobile and digital consumer applications. The drive also improves the stability and performance of any system in which it is used. Samsung announced in the first half of 2007 mass production, using 51nm process technology, of its 1.8-inch 64GB SSD, consisting of 64 eight Gigabit single-level flash memory chips.
Hybrid Hard Drive (HHD)
First to exhibit a commercial prototype of the HHD in 2006, the Samsung 2.5" hybrid hard drives for notebook PCs will be available in 2007 in 80GB, 120GB and 160GB capacities, with either 128MB or 256MB of onboard flash memory for caching purposes.