Samsung Discloses Perfect RAM Prototype
Samsung Discloses Perfect RAM Prototype
  • Staff
  • 승인 2009.05.29 11:58
  • 댓글 0
이 기사를 공유합니다

Samsung RAM

Samsung Discloses Perfect RAM Prototype

Samsung Electronics on May 28 said it will make public the prototype of its 512Mb PRAM, also known as "Perfect" RAM, as it has excellent performance in NAND and NOR flash memories.

The prototype of "Perfect" RAM, the next-generation 65 nanometer 512Mb PRAM, will be shown to the public at the "Ninth Next-Generation Semiconductor Forum" to be held in Anmyeondo, South Chungcheong Province, on May 29. PRAM will be released to the market in June.

삭제한 댓글은 다시 복구할 수 없습니다.
그래도 삭제하시겠습니까?
댓글 0
계정을 선택하시면 로그인·계정인증을 통해
댓글을 남기실 수 있습니다.

  • #1206, 36-4 Yeouido-dong, Yeongdeungpo-gu, Seoul, Korea(Postal Code 07331)
  • 서울특별시 영등포구 여의도동 36-4 (국제금융로8길 34) / 오륜빌딩 1206호
  • URL: / Editorial Div. 02-578-0434 / 010-2442-9446. Email:
  • Publisher: Monica Younsoo Chung. Chief Editorial Writer: Kim Hyoung-joong. CEO: Lee Kap-soo. Editor: Jung Yeon-jin.
  • Juvenile Protection Manager: Yeon Choul-woong. IT Times Canada: Willow St. Vancouver BC, Canada / 070-7008-0005.
  • Copyright(C) Korea IT Times, Allrights reserved.