SEOUL, KOREA - SK Hynix announced on April 7 that it has developed a 20 nanometer-class 8-GB DDR4-based 128-GB server DRAM module, first in the world.
The model uses the state-of-the-art TSV (Through Silicon Via) technology to realize a maximum capacity of 128 GB, two times higher than the existing maximum capacity of 64 GB.
Compared to the existing DDR3’s data transmission speed of 1,333 Mbps, the product features an upgrading to 2,133 Mbps, while being capable of processing 17-GB data per second through a 64 I/O module. Compared to DDR3’s operating voltage of 1.35 V, this product’s operating voltage is reduced to 1.2 V.
SK Hynix plans to kick-start the mass-production of the product from the first half of next year. According to market research firm Gartner, DRAMs for the server market are expected to sustain a robust growth of 37 percent per annum until 2018, along with the expansion in the prevalence of mobile devices.
The DDR4 DRAM market is expected to grow at a full-scale pace from next year, emerging as a flagship model in 2016 and beyond.
