Micron Advances Semiconductor Research & Development Capabilities with New Boise Facility
Micron Advances Semiconductor Research & Development Capabilities with New Boise Facility
  • monica
  • 승인 2017.08.15 05:05
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BOISE, Idaho, Aug. 14, 2017 (GLOBE NEWSWIRE) -- Micron (Nasdaq:MU) hosted an event at its headquarters today to mark the opening of a new facility which will play a critical role in the company’s research into breakthrough new memory and storage technologies of the future. When fully equipped, the new building will nearly double Micron’s cleanroom space dedicated to research and development in Boise, and will support a significant expansion of the company’s overall R&D capabilities.

This expanded facility in Boise is the focal point for developing new semiconductor manufacturing processes and designs for the company’s future memory and storage technologies. Once developed in the Boise R&D center, these processes are then transitioned into production-scale manufacturing in Micron’s network of 12 large scale manufacturing plants (fabs) around the world.

Commemorating this milestone, Micron President and CEO, Sanjay Mehrotra, and Technology Development Executive Vice President, Scott DeBoer, guided public representatives and dignitaries through the new facility.

“Creating the world’s most advanced semiconductors is a highly complex process,” said Mehrotra. “The work done by our industry-leading team of scientists and engineers here in Idaho will help shape tomorrow’s technologies, products and solutions including future generations of phones, vehicles, and data centers, and advance rapidly emerging trends such as artificial intelligence and big data analytics. Today’s accomplishment of our R&D cleanroom space marks a significant acceleration of our innovation capabilities in Boise.”

Construction of the new clean-room facility began in October 2015 to create an expanded pristine, precision-controlled environment for development and fabrication of advanced memory integrated circuits leveraging Micron’s years of deep technical expertise and innovation capability. The foundation of the building required 24,000 cubic yards of concrete, the equivalent of a concrete truck delivery every hour for 100 days straight. Ten million pounds of steel were used to house this advanced research center, and the structure contains 240 miles of wire in the building alone, enough to reach the International Space Station.

The Boise R&D fab lies at the heart of Micron’s global network of innovation, and its expansion will help accelerate the development of future generations of DRAM, NAND and emerging memory technologies. 

DeBoer highlighted that Micron’s leading-edge DRAM technology (1Ynm) has now transitioned from Boise R&D and into Micron’s production fab in Hiroshima, Japan. Over the past year, the R&D team has also successfully completed the development process in Boise for 64-layer 3D NAND, and moved the technology from initial development in Boise all the way through to volume production in Micron’s Singapore fabs.

In its role as the company’s global technology development center, Boise R&D is leading the development of the next-generation of technologies such as future DRAM, 3D XPoint™ and 3D NAND.           

Photography from today’s ceremony is available from Micron’s media relations team: mediarelations@micron.com

Micron Technology, Inc. 
Micron Technology is a world leader in innovative memory solutions. Through our global brands — Micron, Crucial®, Lexar® and Ballistix® — our broad portfolio of high-performance memory technologies, including DRAM, NAND, NOR Flash and 3D XPoint™ memory, is transforming how the world uses information. Backed by more than 35 years of technology leadership, Micron's memory solutions enable the world's most innovative computing, consumer, enterprise storage, data center, mobile, embedded and automotive applications. Micron's common stock is traded on the Nasdaq under the MU symbol.

To learn more about Micron Technology, Inc., visit micron.com.


CONTACT: Contacts:
Shanye Hudson
Investor Relations
(208) 492-1205

Marc Musgrove
Media Relations
(208) 363-2405

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