SK Hynix develops industry's fastest 'HBM2E' DRAM
SK Hynix develops industry's fastest 'HBM2E' DRAM
  • Jung So-yeon
  • 승인 2019.08.13 12:06
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SK Hynix succeeded in developing the industry's fastest 'HBM2E' DRAM. HBM2E is a next-generation product of HBM DRAM that has innovatively increased data processing speed from the previous DRAM, and it has increased processing speed by 50% compared to previous standard called HBM2. 

HBM2E, developed by SK Hynix, can implement 3.6 Gbit/s processing speed, enabling 460 GByte data processing per second through 1,024 I/O. This is enough to process 124 Full-HD movies (3.7 GB) in a second. 

Capacity is 16GB by vertically connecting eight 16Gb chips to TSV (Through Silicon Via) technology based on single product.
HBM2E is a high-end memory solution that is suitable for high-performance GPU that requires ultra-fast characteristics, machine learning, supercomputer, AI, and other 4th industry-based systems. 

Instead of making memory chips into modules and connecting them to the main board, HBM installs the chip itself at logic chips such as GPUs at an interval of tens of micrometers. This will reduce distance between chips and enable faster data processing.

"SK Hynix has been leading the market based on technology competitiveness since it released HBM DRAM for the first time in the world in 2013," said Jeon Joon-hyun, a member in charge of SK Hynix's HBM business strategy. "We will continue to strengthen leadership in premium memory markets by starting mass-production in 2020 when HBM2E market is going to be open."

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