SK hynix unveils industry's first 12-Layer HBM3 with 24GB memory capacity
SK hynix unveils industry's first 12-Layer HBM3 with 24GB memory capacity
  • Yeon Choul-woong
  • 승인 2023.04.20 16:09
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SK hynix has announced that it has successfully developed the industry's first 12-layer HBM3 (High Bandwidth Memory) product with a massive 24GB memory capacity, which is currently the largest in the industry. 

“The company succeeded in developing the 24GB package product that increased the memory capacity by 50% from the previous product, following the mass production of the world’s first HBM3 in June last year,” SK hynix said. “We will be able to supply the new products to the market from the second half of the year, in line with growing demand for premium memory products driven by the AI-powered chatbot industry.”

HBM is a high-value and high-performance memory that interconnects multiple DRAM (Dynamic Random-Access Memory) chips vertically, providing faster data processing than traditional DRAM products. HBM3 is the fourth generation product, succeeding HBM, HBM2, and HBM2E.

SK hynix engineers have improved the efficiency of the process and the performance stability by applying Advanced Mass Reflow Molded Underfill (MR-MUF) technology to the latest product. 

Moreover, the Through Silicon Via (TSV)4 technology has reduced the thickness of a single DRAM chip by 40%, achieving the same stack height level as the 16GB product.

The latest HBM3 standard is considered the optimal product for rapid processing of large volumes of data, and its adoption by major global tech companies is on the rise. SK hynix's HBM3 product, with its massive memory capacity, is particularly attractive for the implementation of generative AI in high-performance computing (HPC) systems.

SK hynix has been a pioneer in developing HBM, first introducing the technology in 2013, and the latest HBM3 product has drawn significant attention from the memory chip industry. 

The company has provided samples of its 24GB HBM3 product to multiple customers, who have expressed great expectation for the latest product, while the performance evaluation of the product is ongoing.

“SK hynix was able to continuously develop a series of ultra-high speed and high capacity HBM products through its leading technologies used in the back-end process,” said Sang Hoo Hong, Head of Package & Test at SK hynix. “The company plans to complete mass production preparation for the new product within the first half of the year to further solidify its leadership in cutting-edge DRAM market in the era of AI.”


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