PLYMOUTH, ENGLAND - Plessey today announced the realisation of its high-performance, high-quality, and high-volume, large LED die performance based on its leading GaN-on-Silicon technology.
The large die benefits from three core features of the Plessey process; the first being the low thermal resistance of silicon, followed by a single-surface, emitter die design and 6-inch wafer processing. To exploit these benefits, Plessey has produced a 20 sq. mm die design (i.e. 4.5 x 4.5mm) that will generate up to 5W of blue light over a 400-480nm wavelength range. This die is produced as a technology demonstrator to enable meaningful engagement with customers to determine the optimum application fit.
David Owen, Plessey's Marketing Director, explains, "It is clear that the next wave of general lighting products will see LEDs applied in ways that truly exploit the benefits obtained through Plessey's leading GaN-on-Si technology. This announcement marks the start of a phase where we engage with our key partner customers in defining the commercial realisation of lighting products based on Plessey's large GaN-on-Silicon LED die."
There will be innovative demonstrations by technical and design experts for Plessey's LED technology at the stand. This is an opportunity to gain a deeper understanding of Plessey's latest products and solutions for the commercial, industrial, consumer and wearable lighting segments.
Plessey's MaGIC™ (Manufactured on GaN-on-Si I/C) High Brightness LED (HBLED) technology has won numerous awards for its innovation and ability to cut the cost of LED lighting by using standard silicon manufacturing techniques.
By Valerie Tullar(info@koreaittimes.com)