Featuring a pair of power MOSFETs in each package, the new PQFN2x2 and PQFN3.3x3.3 dual devices offer the flexibility of either common drain or half-bridge topologies. Utilizing IR's latest low-voltage silicon technologies (N and P), the devices deliver ultra-low losses. The IRLHS6276, for example, features two MOSFETS each with a typical on-state resistance (RDS(on)) of 33 milliohms in only a 4 mm2 area.
The new PQFN dual devices offer customers a high density, cost effective solution for switching and DC applications. With the addition of these new packages, IR now offers a broad low-voltage PQFN portfolio that encompasses both N- and P-Channel, 20 V and 30 V, 4.5 V or 2.5 V minimum drive capability, single and dual devices that all deliver extremely low RDS(on).
The Dual PQFN family includes P-Channel devices optimized for use in the high-side of load switches, providing a simpler drive solution. Featuring a low profile of less than 1 mm, the devices are compatible with existing Surface Mount Techniques, feature industry-standard footprint and are RoHS compliant.
Datasheets and a MOSFET product selection tool are available on the International Rectifier website at http://www.irf.com. Production orders are available immediately.